Near room-temperature memory devices based on hybrid spin-crossover SiO2 nanoparticles coupled to single-layer graphene nanoelectrodes

摘要

In this paper, we report on the charge transport properties of hybridnanoparticles (NPs) based on the polymeric 1D compound [Fe(Htrz)2(trz)](BF4),which is one of the most promising SCO systems for designing electronicdevices. In particular, we used for the first time hybrid SCO NPs covered witha silica shell and placed in between single-layer graphene electrodes. Weevidence a reproducible thermal hysteresis loop in the conductance aboveroom-temperature, meaning that no degradation of the current levels has beendetected; we thus conclude that the robustness of the spin-transition issignificantly improved as compared with previous results and with other reportswhere even larger assemblies and SCO objects were involved. This bistabilitycombined with the versatility of graphene represents a promising scenario for avariety of technological applications but also for future sophisticatedfundamental studies.